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| IGBT MODULE GAE100BA60 SanRex IGBT Module GAE100BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode (trr=0.1 s) reverse connected across IGBT. IC 100A VCES 600V VCES sat 2.3V Typ t f 0.10 s Typ Soft recovery diode Applications Brake for motor control (VVVF) UL;E76102 M Unit mm Maximum Ratings Symbol VCES VGES Ic ICP Ic PT Tj Tstg VISO Item Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC Pulse ms Reverse Collector Current Total Power Dissipation Junction Temperature Storage Temperature Isolation Voltage R.M.S. Mounting Torque Mass Mounting Terminal 6 5 A.C. minute Recommended Value 2.5 3.9 25 40 Recommended Value 1.5 2.5 15 25 Typical Value Tc 25 Conditions with gate terminal shorted to emitter with collector shorted to emitter Unless otherwise Tj 25 Ratings GAE100BA60 600 20 100 200 100 400 150 40 125 2500 4.7 48 2.7 28 210 V V V A A Unit W Nm kgf cm g Electrical Characteristics Symbol IGES ICES V BR CES th sat Item Gate Leakage Current Collector Cut-Off Current Collector-Emitter Breakdown Voltage Gate Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn-on Delay Time Fall Time Turn-off Delay Time Emitter-Collector Voltage Reverse Recovery Time Thermal Resistance Forward Voltage Drop Reverse Recovery Time Thermal Impedance VGE Conditions 20V VCE 0V mA Ratings Min. Typ. Max. 500 1.00 600 3.0 2.30 7.00 0.10 0.20 0.10 0.40 2.00 0.10 7.00 2.80 10.00 0.20 0.40 0.20 0.80 2.80 0.15 0.31 0.55 2.00 0.10 2.80 0.15 0.55 Unit nA mA V V V nF VCE 600V VGE 0V VGE 0V Ic VCE 10V Ic 10mA Ic 100A VGE 15V VCE 10V VGE 0V f 1MHz Ic 100A VGE 15V/ 5V Vcc 300V RG 6 Ic 100A VGE 0V Ic 100A VGE IGBT-Case Diode-Case IF 100A, Clamp Diode IF 100A di F/ dt Clamp Diode 200A/ s, Clamp Diode 10V di / dt 200A/ s VGE VCE Cies tr td on tf td off VECS trr Rth j-c VFM trr Rth j-c s V s /W V s /W 43 GAE100BA60 44 GAE100BA60 45 |
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